Ultra-Wide-Band-Gap Semiconductors
Novel ultra-wide-band-gap (>3.4 eV) semiconductors are developed for energy-efficient high-power electronics.
Novel ultra-wide-band-gap (>3.4 eV) semiconductors are developed for energy-efficient high-power electronics.
Memristors based on entropy-stabilized oxides are fabricated for domain-specific computing.
Novel semiconductors with high-mobility and low-process temperature are developed for monolithic 3D integration .
[1] Sieun Chae, Logan Williams, Jihang Lee, John T. Heron, Emmanouil Kioupakis,
"Effects of Local Compositional and Structural Disorder on Vacancy Formation in Entropy-Stabilized Oxides from First-Principles"
npj Computational Materials, 8, 95 (2022)
[2] Sieun Chae, Kelsey Mengle, Kyle Bushick, Jihang Lee, Nocona Sanders, Zihao Deng, Zetian Mi, Pierre F.P. Poudeu, Hanjong Paik, John T. Heron, Emmanouil Kioupakis,
"Toward the Predicted Discovery of Ambipolarly Dopable Ultra-Wide-Band-Gap Semiconductors: The Case of Rutile GeO2," Applied Physics Letters, 118, 26 (2021)
[3] Kyle Bushickξ, Sieun Chaeξ, Zihao Deng, John T. Heron, Emmanouil Kioupakis,
"Boron Arsenide Heterostructures: Lattice-Matched Heterointerfaces and Strain Effects on Band Alignments and Mobility"
npj Computational Materials, 6, 3 (2020)
[4] Sieun Chae, Soo Sang Chae, Min Choi, Hye min Park, Hyunju Chang, Jeong-O Lee, Tae Il Lee,
"Blocking of the 1T-to-2H Phase Transformation of Chemically Exfoliated Transition Metal Disulfides by Using a Lattice Lock"
Nano Energy, 56, 65-73 (2019)
[5] Sieun Chae, Seunghun Jang, Won Jin Choi, Youn Sang Kim, Hyunju Chang, Tae Il Lee, Jeong-O Lee,
"Lattice Transparency of Graphene"
Nano Letters, 17, 1711-1718 (2017)